Defects in semiconductors by Lucia Romano, Vittorio Privitera, Chennupati Jagadish

By Lucia Romano, Vittorio Privitera, Chennupati Jagadish

This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, makes a speciality of defects in semiconductors. Defects in semiconductors support to provide an explanation for numerous phenomena, from diffusion to getter, and to attract theories on fabrics' habit in line with electric or mechanical fields.

The quantity comprises chapters focusing particularly on electron and proton irradiation of silicon, aspect defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and lots more and plenty extra. it's going to support help scholars and scientists of their experimental and theoretical paths.

  • Expert contributors
  • Reviews of an important contemporary literature
  • Clear illustrations
  • A huge view, together with exam of defects in several semiconductors

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Defects in semiconductors

This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, makes a speciality of defects in semiconductors. Defects in semiconductors support to give an explanation for numerous phenomena, from diffusion to getter, and to attract theories on fabrics' habit in accordance with electric or mechanical fields. the quantity comprises chapters focusing in particular on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and masses extra.

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Appl. Phys. 73, 691–698. , 1998. A calibrated model for trapping of implanted dopants at material interface during thermal annealing. In: Technical Digest of the 1998 International Electron Devices Meeting (IEDM). IEEE, Piscataway, NJ, pp. 509–512. , 1989. New model for dopant redistribution at interfaces. Appl. Phys. Lett. 55, 1762–1764. , 1988. Boron diffusion in silicon at high concentrations. J. Appl. Phys. 63, 116–120. , 1986. Diffusion without vacancies or interstitials: a new concerted exchange mechanism.

This influence results from the coupling terms RMI, RMV, RMI + V , and RMV + I in the continuity equations of the intrinsic point defects (44) and (45). Simulations with our simplified system with a constant pair diffusion coefficient are shown in Fig. 4. The parameter varied is the ratio eq of the equilibrium transport capacities of the intrinsic point defects DX Á CX surf and the pairs DMX Á CMX where Csurf MX denotes the constant surface concentration of the pairs used as boundary condition in the simulation.

49 Electron and Proton Irradiation of Silicon 2. IRRADIATION OF SILICON: GENERAL ISSUES When an energetic particle such as the proton penetrates into a crystalline solid, like silicon, it will be slowed down by multiple collisions with silicon atoms and with bound or free electrons. For protons or heavier particles, these processes are termed nuclear stopping and electronic stopping, respectively, and for electrons they are normally called collision and radiative stopping, respectively. The nuclear/collision stopping process is responsible for the structural defects created during the slowing down of the energetic particle, and displacements of silicon atoms will occur as long as the particle can transfer energy in the collision process to a silicon atom that is larger than the displacement energy of the silicon atom, usually taken to be 15 eV.

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