By Lucia Romano, Vittorio Privitera, Chennupati Jagadish
This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, specializes in defects in semiconductors. Defects in semiconductors aid to provide an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit in line with electric or mechanical fields.
The quantity comprises chapters focusing in particular on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and masses extra. it's going to aid aid scholars and scientists of their experimental and theoretical paths.
- Expert contributors
- Reviews of crucial fresh literature
- Clear illustrations
- A huge view, together with exam of defects in numerous semiconductors
Read Online or Download Defects in Semiconductors, Volume 91 PDF
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This quantity, quantity ninety one within the Semiconductor and Semimetals sequence, makes a speciality of defects in semiconductors. Defects in semiconductors support to provide an explanation for a number of phenomena, from diffusion to getter, and to attract theories on fabrics' habit in accordance with electric or mechanical fields. the amount contains chapters focusing particularly on electron and proton irradiation of silicon, element defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and masses extra.
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Additional resources for Defects in Semiconductors, Volume 91
Experimentally, phase formation was observed in a variety of systems. , Pignatel and Queirolo, 1980). This layer maintains the boron concentration at solid solubility during in-diffusion. , 1977). Nowadays, ion implantation allows to dope samples considerably above solid solubility. , 1994). , 2012). Dopants in precipitates are usually electrically neutralized and immobilized. In addition, as mentioned above, dopant precipitation is often found to be associated with an injection of intrinsic point defects to accommodate the changes in molar volume.
The concentrations of ionized pairs of dopants and intrinsic point defects as well as the concentrations of ionized intrinsic point defects are usually considered to be too low in comparison to the majority carrier concentration. , 2014). For some practical situations and assessing the system behavior below, it may suffice to assume local charge neutrality. This corresponds to neglecting the divergence of the electric displacement field and assuming that the term in parentheses on the right-hand side vanishes.
1998), models soon assumed coexisting boron-interstitial clusters (BICs). With the notation BmIn referring to m boron atoms and n self-interstitials somehow arranged around m lattice sites, the growth of BICs is assumed to proceed either via the reaction with self-interstitials k! Bm In + I Ð Bm In + 1 k (76) or via the reaction with boron interstitials k! Bm In + Bi Ð Bm + 1 In + 1 : k (77) Development of such models was supported by numerous ab initio simulations. Comprising nowadays up to 10 boron atoms and self-interstitials, they were shown in many publications to be able to explain experiments in a wide range of experimental conditions.